Premium
Enhanced Charge Carrier Mobility in Two‐Dimensional High Dielectric Molybdenum Oxide (Adv. Mater. 1/2013)
Author(s) -
Balendhran Sivacarendran,
Deng Junkai,
Ou Jian Zhen,
Walia Sumeet,
Scott James,
Tang Jianshi,
Wang Kang L.,
Field Matthew R.,
Russo Salvy,
Zhuiykov Serge,
Strano Michael S.,
Medhekar Nikhil,
Sriram Sharath,
Bhaskaran Madhu,
Kalantarzadeh Kourosh
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201370007
Subject(s) - materials science , molybdenum , molybdenum oxide , oxide , dielectric , intercalation (chemistry) , electron mobility , charge carrier , nanoelectronics , graphene , band gap , nanotechnology , inorganic chemistry , optoelectronics , metallurgy , chemistry
Extremely high carrier mobilities are achieved in layered molybdenum oxide by Sivacarendran Balendhran, Kourosh Kalantar‐zadeh, and co‐workers on page 109 . This is achieved by intercalation of the octahedral molybdenum oxide lattice with hydrogen, which tunes the bandgap of the material. Carrier mobilities of 1100 cm 2 V −1 s −1 and greater are attained, highlighting the potential of ultrathin molybdenum oxide for high speed nanoelectronics.