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Tunable, Ultralow‐Power Switching in Memristive Devices Enabled by a Heterogeneous Graphene–Oxide Interface
Author(s) -
Qian Min,
Pan Yiming,
Liu Fengyuan,
Wang Miao,
Shen Haoliang,
He Daowei,
Wang Baigeng,
Shi Yi,
Miao Feng,
Wang Xinran
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201306028
Subject(s) - graphene , materials science , interface (matter) , oxide , quantum tunnelling , heterojunction , nanotechnology , reduction (mathematics) , power (physics) , optoelectronics , computer science , physics , geometry , mathematics , capillary number , quantum mechanics , capillary action , metallurgy , composite material
Memristive devices based on vertical heterostructures of graphene and TiO x show a significant power reduction that is up to ∼10 3 times smaller than that of conventional structures. This power reduction arises as a result of a tunneling barrier at the interface. The barrier is tunable, opening up the possibility of engineering several key memory characteristics.