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Record High Electron Mobility of 6.3 cm 2 V −1 s −1 Achieved for Polymer Semiconductors Using a New Building Block
Author(s) -
Sun Bin,
Hong Wei,
Yan Zhuangqing,
Aziz Hany,
Li Yuning
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201305981
Subject(s) - ambipolar diffusion , materials science , acceptor , block (permutation group theory) , polymer , transistor , electron mobility , electron acceptor , semiconductor , crystallography , nanotechnology , electron , optoelectronics , physics , condensed matter physics , chemistry , combinatorics , organic chemistry , nuclear physics , mathematics , voltage , quantum mechanics , composite material
A new electron acceptor building block , 3,6‐di(pyridin‐2‐yl)pyrrolo[3,4‐ c ]pyrrole‐1,4(2 H ,5 H )‐dione (DBPy), is used to construct a donor‐acceptor polymer, PDBPyBT. This polymer exhibits a strong self‐assembly capability, to form highly crystalline and oriented thin films with a short π–π stacking distance of 0.36 nm. PDBPyBT shows ambipolar charge‐transport performance in organic thin‐film transistors, reaching a record high electron‐mobility value of 6.30 cm 2 V −1 s −1 .