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Ambipolar MoTe 2 Transistors and Their Applications in Logic Circuits
Author(s) -
Lin YenFu,
Xu Yong,
Wang ShengTsung,
Li SongLin,
Yamamoto Mahito,
AparecidoFerreira Alex,
Li Wenwu,
Sun Huabin,
Nakaharai Shu,
Jian WenBin,
Ueno Keiji,
Tsukagoshi Kazuhito
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201305845
Subject(s) - ambipolar diffusion , materials science , transistor , schottky diode , schottky barrier , optoelectronics , amplifier , electronic circuit , field effect transistor , voltage , cmos , nanotechnology , electrical engineering , diode , electron , physics , quantum mechanics , engineering
We report ambipolar charge transport in α‐molybdenum ditelluride (MoTe 2 ) flakes , whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe 2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back‐gate voltage ( V bg ) and drain‐source voltage ( V ds ). Using these ambipolar MoTe 2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.