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Highly Stretchable Transistors Using a Microcracked Organic Semiconductor
Author(s) -
Chortos Alex,
Lim Josh,
To John W. F.,
Vosgueritchian Michael,
Dusseault Thomas J.,
Kim TaeHo,
Hwang Sungwoo,
Bao Zhenan
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201305462
Subject(s) - materials science , organic semiconductor , semiconductor , transistor , nanotechnology , optoelectronics , electrical engineering , voltage , engineering
Organic transistors with elastic conductors and dielectrics can be stretched up to 250% strain while maintaining the transistor characteristics. Strain‐independent properties can be achieved after an initial “programming” cycle that causes the formation of microcracks in the semiconductor. The change in mobility with strain follows the same trend in different stretching directions.