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Flexible and Transparent Silicon‐on‐Polymer Based Sub‐20 nm Non‐planar 3D FinFET for Brain‐Architecture Inspired Computation
Author(s) -
Sevilla Galo A. Torres,
Rojas Jhonathan P.,
Fahad Hossain M.,
Hussain Aftab M.,
Ghanem Rawan,
Smith Casey E.,
Hussain Muhammad M.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201305309
Subject(s) - materials science , wafer , planar , transistor , silicon , silicon on insulator , optoelectronics , computation , thin film transistor , nanotechnology , electrical engineering , computer science , engineering , voltage , computer graphics (images) , algorithm , layer (electronics)
An industry standard 8′′ silicon‐on‐insulator wafer based ultra‐thin (1 μm), ultra‐light‐weight, fully flexible and remarkably transparent state‐of‐the‐art non‐planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub‐20 nm features and the highest performance ever reported for a flexible transistor.