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Fundamental Limitations for Electroluminescence in Organic Dual‐Gate Field‐Effect Transistors
Author(s) -
Roelofs W. S. Christian,
Spijkman MarkJan,
Mathijssen Simon G. J.,
Janssen René A. J.,
de Leeuw Dago M.,
Kemerink Martijn
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201305215
Subject(s) - lasing threshold , materials science , electroluminescence , transistor , optoelectronics , electron , field effect transistor , voltage , nanotechnology , physics , wavelength , layer (electronics) , quantum mechanics
A dual‐gate organic field‐effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.