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High‐Mobility Field‐Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers
Author(s) -
Tseng HsinRong,
Phan Hung,
Luo Chan,
Wang Ming,
Perez Louis A.,
Patel Shrayesh N.,
Ying Lei,
Kramer Edward J.,
Nguyen ThucQuyen,
Bazan Guillermo C.,
Heeger Alan J.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201305084
Subject(s) - materials science , organic field effect transistor , polymer , transistor , electron mobility , field effect transistor , optoelectronics , nanotechnology , composite material , voltage , electrical engineering , engineering
A record high OFET hole mobility , as high as 23.7 cm 2 /Vs, is achieved in macroscopic aligned semiconducting polymers. The high mobility is insensitive to the polymer molecular weight. Polymer chains are aligned along the fiber to facilitate intrachain charge transport.