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New Visible Light Absorbing Materials for Solar Fuels, Ga(Sb x )N 1− x
Author(s) -
Sunkara Swathi,
Vendra Venkat Kalyan,
Jasinski Jacek Bogdan,
Deutsch Todd,
Andriotis Antonis N.,
Rajan Krishna,
Me Madhu,
Sunkara Mahendra
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201305083
Subject(s) - materials science , chemical vapor deposition , antimonide , alloy , metalorganic vapour phase epitaxy , band gap , gallium antimonide , hydrogen , water splitting , optoelectronics , nanotechnology , engineering physics , physics , chemistry , metallurgy , photocatalysis , organic chemistry , epitaxy , layer (electronics) , catalysis , superlattice
A novel visible‐light‐absorbing dilute alloy, Ga(Sb x )N 1− x is synthesized by metal organic chemical vapor deposition (MOCVD) for solar hydrogen production. Significant bandgap reduction of GaN, from 3.4 eV to 1.8 eV, is observed, with a low (2%) incorporation of antimonide, and the lattice expansion is in agreement with our first‐principles calculations. The band edges of Ga(Sb x )N 1− x are found to straddle the water redox potentials showing excellent suitability for solar water splitting.