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Semiconductor Alloy Nanoribbon Lateral Heterostructures for High‐Performance Photodetectors
Author(s) -
Guo Pengfei,
Hu Wei,
Zhang Qinglin,
Zhuang Xiujuan,
Zhu Xiaoli,
Zhou Hong,
Shan Zhengping,
Xu Jinyou,
Pan Anlian
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304967
Subject(s) - materials science , responsivity , photodetector , heterojunction , optoelectronics , semiconductor , epitaxy , quantum efficiency , alloy , nanotechnology , composite material , layer (electronics)
High‐performance visible‐light photodetectors are achieved based on single nanoribbon lateral heterostructures composed of two different semiconductor alloys epitaxially grown in the lateral direction. They reveal superior spectral response range, responsivity, I on / I off ratio, and external quantum efficiency, relative to devices based on single composition structures.