Premium
Charge Density Dependent Two‐Channel Conduction in Organic Electric Double Layer Transistors (EDLTs)
Author(s) -
Xie Wei,
Liu Feilong,
Shi Sha,
Ruden P. Paul,
Frisbie C. Daniel
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304946
Subject(s) - rubrene , percolation (cognitive psychology) , materials science , channel (broadcasting) , transistor , thermal conduction , optoelectronics , charge (physics) , thin film transistor , layer (electronics) , nanotechnology , telecommunications , computer science , physics , voltage , particle physics , quantum mechanics , neuroscience , composite material , biology
A transport model based on hole‐density‐dependent trapping is proposed to explain the two unusual conductivity peaks at surface hole densities above 10 13 cm −2 in rubrene electric double layer transistors (EDLTs). Hole transport in rubrene is described to occur via multiple percolation pathways, where conduction is dominated by transport in the free‐site channel at low hole density, and in the trap‐site channel at larger hole density.