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Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors
Author(s) -
Wang Lifeng,
Wu Bin,
Chen Jisi,
Liu Hongtao,
Hu Pingan,
Liu Yunqi
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304937
Subject(s) - materials science , hexagonal boron nitride , graphene , monolayer , field effect transistor , boron nitride , interface (matter) , nanotechnology , hexagonal crystal system , nitride , optoelectronics , transistor , layer (electronics) , composite material , crystallography , electrical engineering , voltage , chemistry , engineering , capillary number , capillary action
Viable and general techniques that allow effective size control of triangular‐shaped, single‐crystal, monolayer h‐BN domains grown by the CVD method, direct optical visualization of h‐BN domains, and the cleaning of the h‐BN surface to achieve reliable graphene device quality are reported for the first time. This study points to a critical role of the interfacial properties between the graphene and the monolayer h‐BN in determining reliable, enhanced graphene‐device performance.