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Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS 2 Surface
Author(s) -
Chiappe Daniele,
Scalise Emilio,
Cinquanta Eugenio,
Grazianetti Carlo,
van den Broek Bas,
Fanciulli Marco,
Houssa Michel,
Molle Alessandro
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304783
Subject(s) - nanosheet , materials science , epitaxy , substrate (aquarium) , hexagonal crystal system , molecular beam epitaxy , lattice (music) , layer (electronics) , electronic structure , trigonal crystal system , nanotechnology , crystallography , chemical physics , condensed matter physics , crystal structure , oceanography , chemistry , physics , acoustics , geology
The structural and electronic properties of a Si nanosheet (NS) grown onto a MoS 2 substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS 2 by forming two‐dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS 2 surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS 2 hosting substrate they are qualified by a gap‐less density of states.
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