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In Situ and Non‐Volatile Bandgap Tuning of Multilayer Graphene Oxide in an All‐Solid‐State Electric Double‐Layer Transistor
Author(s) -
Tsuchiya Takashi,
Terabe Kazuya,
Aono Masakazu
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304770
Subject(s) - materials science , graphene , oxide , optoelectronics , transistor , photoluminescence , band gap , nanotechnology , layer (electronics) , cubic zirconia , voltage , composite material , ceramic , physics , quantum mechanics , metallurgy
The sp 2 /sp 3 domain fraction of multilayer graphene oxide (GO) is tuned in situ and in a non‐volatile manner by using a proton‐induced redox reaction at the interface of GO and the yttria‐stabilized zirconia proton‐conductor. This method opens the door for transparent, ultrathin, flexible, and low cost carbon‐nanoionics devices that can control not only electronic transport, but also other properties such as photoluminescence and optics.