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25th Anniversary Article: Microstructure Dependent Bias Stability of Organic Transistors
Author(s) -
Lee Wi Hyoung,
Choi Hyun Ho,
Kim Do Hwan,
Cho Kilwon
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304665
Subject(s) - materials science , trapping , instability , transistor , dielectric , semiconductor , optoelectronics , field effect transistor , charge (physics) , stress (linguistics) , nanotechnology , organic semiconductor , engineering physics , chemical physics , condensed matter physics , electrical engineering , voltage , chemistry , physics , mechanics , ecology , linguistics , philosophy , quantum mechanics , biology , engineering
Recent studies of the bias‐stress‐driven electrical instability of organic field‐effect transistors (OFETs) are reviewed. OFETs are operated under continuous gate and source/drain biases and these bias stresses degrade device performance. The principles underlying this bias instability are discussed, particularly the mechanisms of charge trapping. There are three main charge‐trapping sites: the semiconductor, the dielectric, and the semiconductor‐dielectric interface. The charge‐trapping phenomena in these three regions are analyzed with special attention to the microstructural dependence of bias instability. Finally, possibilities for future research in this field are presented. This critical review aims to enhance our insight into bias‐stress‐induced charge trapping in OFETs with the aim of minimizing operational instability.