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Coherent X‐Ray Diffraction Imaging and Characterization of Strain in Silicon‐on‐Insulator Nanostructures
Author(s) -
Xiong Gang,
Moutanabbir Oussama,
Reiche Manfred,
Harder Ross,
Robinson Ian
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304511
Subject(s) - materials science , diffraction , characterization (materials science) , nanometre , nanotechnology , coherent diffraction imaging , nanostructure , nanoscopic scale , bragg's law , silicon on insulator , semiconductor , silicon , optoelectronics , engineering physics , optics , physics , fourier transform , quantum mechanics , composite material , phase retrieval
Coherent X‐ray diffraction imaging (CDI) has emerged in the last decade as a promising high resolution lens‐less imaging approach for the characterization of various samples. It has made significant technical progress through developments in source, algorithm and imaging methodologies thus enabling important scientific breakthroughs in a broad range of disciplines. In this report, we will introduce the principles of forward scattering CDI and Bragg geometry CDI (BCDI), with an emphasis on the latter. BCDI exploits the ultra‐high sensitivity of the diffraction pattern to the distortions of crystalline lattice. Its ability of imaging strain on the nanometer scale in three dimensions is highly novel. We will present the latest progress on the application of BCDI in investigating the strain relaxation behavior in nanoscale patterned strained silicon‐on‐insulator (sSOI) materials, aiming to understand and engineer strain for the design and implementation of new generation semiconductor devices.