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Controllable Co‐segregation Synthesis of Wafer‐Scale Hexagonal Boron Nitride Thin Films
Author(s) -
Zhang Chaohua,
Fu Lei,
Zhao Shuli,
Zhou Yu,
Peng Hailin,
Liu Zhongfan
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304301
Subject(s) - materials science , monolayer , hexagonal boron nitride , annealing (glass) , nanomesh , wafer , thin film , nanotechnology , hexagonal crystal system , boron nitride , graphene , crystallography , metallurgy , chemistry
A facile and scalable co‐segregation method is used to grow hexagonal boron nitride (h‐BN) thin films from B‐ and N‐containing metals. By annealing the sandwiched metal substrates in vacuum, sub‐monolayer h‐BN flakes, monolayer h‐BN films, and multilayer h‐BN thin films of varying thickness are successfully prepared. This approach follows an underneath‐growth mode and exhibits good thickness‐ and location‐control.