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The Complete In‐Gap Electronic Structure of Colloidal Quantum Dot Solids and Its Correlation with Electronic Transport and Photovoltaic Performance
Author(s) -
Katsiev Khabiboulakh,
Ip Alexander H.,
Fischer Armin,
Tanabe Iori,
Zhang Xin,
Kirmani Ahmad R.,
Voznyy Oleksandr,
Rollny Lisa R.,
Chou Kang Wei,
Thon Susanna M.,
Carey Graham H.,
Cui Xiaoyu,
Amassian Aram,
Dowben Peter,
Sargent Edward H.,
Bakr Osman M.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304166
Subject(s) - materials science , passivation , photovoltaics , x ray photoelectron spectroscopy , quantum dot , photovoltaic system , optoelectronics , band gap , halide , electronic structure , colloid , nanotechnology , chemical engineering , inorganic chemistry , condensed matter physics , electrical engineering , chemistry , physics , engineering , layer (electronics)
The direct observation of the complete electronic band structure of a family of PbS CQD solids via photoelectron spectroscopy is reported. We investigate how materials processing strategies, such as the latest passivation methods that produce record‐performance photovoltaics, achieve their performance advances. Halide passivated films show a drastic reduction in states in the midgap, contributing to a marked improvement in the device performance.