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Spectroscopic Proof of the Correlation between Redox‐State and Charge‐Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices
Author(s) -
Herpers Anja,
Lenser Christian,
Park Chanwoo,
Offi Francesco,
Borgatti Francesco,
Panaccione Giancarlo,
Menzel Stephan,
Waser Rainer,
Dittmann Regina
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304054
Subject(s) - redox , materials science , x ray photoelectron spectroscopy , stack (abstract data type) , chemical physics , ion , resistive touchscreen , interface (matter) , analytical chemistry (journal) , chemical engineering , electrical engineering , chemistry , composite material , organic chemistry , chromatography , computer science , engineering , metallurgy , programming language , capillary number , capillary action
By using hard X‐ray photoelectron spectroscopy experimentally , proof is provided that resistive switching in Ti/Pr 0.48 Ca 0.52 MnO 3 (PCMO) devices is based on a redox‐process that mainly occurs on the Ti‐side. The different resistance states are determined by the amount of fully oxidized Ti‐ions in the stack, implying a reversible redox‐reaction at the interface, which governs the formation and shortening of an insulating tunnel barrier.