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Determination of Polarization‐Fields Across Polytype Interfaces in InAs Nanopillars
Author(s) -
Li Luying,
Gan Zhaofeng,
McCartney Martha R.,
Liang Hanshuang,
Yu Hongbin,
Yin WanJian,
Yan Yanfa,
Gao Yihua,
Wang Jianbo,
Smith David J.
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201304021
Subject(s) - nanopillar , materials science , wurtzite crystal structure , polarization (electrochemistry) , stacking , atomic units , tetrahedron , condensed matter physics , induced polarization , molecular physics , nanotechnology , crystallography , nanostructure , nuclear magnetic resonance , physics , electrical resistivity and conductivity , chemistry , quantum mechanics , zinc , metallurgy
Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.