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Band‐Bending in Organic Semiconductors: the Role of Alkali‐Halide Interlayers
Author(s) -
Wang Haibo,
Amsalem Patrick,
Heimel Georg,
Salzmann Ingo,
Koch Norbert,
Oehzelt Martin
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201303467
Subject(s) - materials science , band bending , alkali metal , halide , organic semiconductor , semiconductor , doping , insulator (electricity) , bending , dipole , cathode , inorganic chemistry , composite material , optoelectronics , organic chemistry , chemistry
Band‐bending in organic semiconductors , occurring at metal/alkali‐halide cathodes in organic‐electronic devices, is experimentally revealed and electrostatically modeled. Metal‐to‐organic charge transfer through the insulator, rather than doping of the organic by alkali‐metal ions, is identified as the origin of the observed band‐bending, which is in contrast to the localized interface dipole occurring without the insulating buffer layer.