Premium
Critical Factors to Achieve Low Voltage‐ and Capacitance‐Based Organic Field‐Effect Transistors
Author(s) -
Jang Mi,
Park Ji Hoon,
Im Seongil,
Kim Se Hyun,
Yang Hoichang
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201303388
Subject(s) - materials science , pentacene , optoelectronics , low voltage , polystyrene , enhanced data rates for gsm evolution , capacitance , dielectric , transistor , field effect transistor , organic semiconductor , voltage , nanotechnology , thin film transistor , polymer , electrical engineering , electrode , composite material , telecommunications , chemistry , engineering , layer (electronics) , computer science
Hydrophobic organo‐compatible but low‐capacitance dielectrics (10.5 nFcm −2 ), polystyrene‐grafted SiO 2 could induce surface‐mediated large crystal grains of face‐to‐face stacked triethylsilylethynyl anthradithiophene (TES‐ADT), producing more efficient charge‐carrier transport, in comparison to μm‐sized pentacene crystals containing a face‐to‐edge packing. Low‐voltage operating TES‐ADT OFETs showed good device performance (μ FET ≈ 1.3 cm 2 V −1 s −1 , V th ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.