Critical Factors to Achieve Low Voltage‐ and Capacitance‐Based Organic Field‐Effect Transistors | Zendy

Jang Mi | Zendy; Park Ji Hoon | Zendy; Im Seongil | Zendy; Kim Se Hyun | Zendy; Yang Hoichang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Critical Factors to Achieve Low Voltage‐ and Capacitance‐Based Organic Field‐Effect Transistors

Author(s) -

Jang Mi,

Park Ji Hoon,

Im Seongil,

Kim Se Hyun,

Yang Hoichang

Publication year - 2014

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201303388

Subject(s) - materials science , pentacene , optoelectronics , low voltage , polystyrene , enhanced data rates for gsm evolution , capacitance , dielectric , transistor , field effect transistor , organic semiconductor , voltage , nanotechnology , thin film transistor , polymer , electrical engineering , electrode , composite material , telecommunications , chemistry , engineering , layer (electronics) , computer science

Hydrophobic organo‐compatible but low‐capacitance dielectrics (10.5 nFcm −2 ), polystyrene‐grafted SiO 2 could induce surface‐mediated large crystal grains of face‐to‐face stacked triethylsilylethynyl anthradithiophene (TES‐ADT), producing more efficient charge‐carrier transport, in comparison to μm‐sized pentacene crystals containing a face‐to‐edge packing. Low‐voltage operating TES‐ADT OFETs showed good device performance (μ FET ≈ 1.3 cm 2 V −1 s −1 , V th ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research