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Voltage‐Controlled Nonvolatile Molecular Memory of an Azobenzene Monolayer through Solution‐Processed Reduced Graphene Oxide Contacts
Author(s) -
Min Misook,
Seo Sohyeon,
Lee Sae Mi,
Lee Hyoyoung
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201303335
Subject(s) - azobenzene , graphene , materials science , monolayer , electrode , oxide , fabrication , optoelectronics , non volatile memory , nanotechnology , conductance , voltage , composite material , electrical engineering , chemistry , polymer , medicine , alternative medicine , mathematics , engineering , pathology , combinatorics , metallurgy
The solution‐processed fabrication of an azobenzene (ABC10) monolayer‐based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans‐–cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft‐contact top electrode plays an important role in the conformational‐change‐dependent conductance switching process of an ABC10 monolayer.