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Two‐Dimensional Carrier Distribution in Top‐Gate Polymer Field‐Effect Transistors: Correlation between Width of Density of Localized States and Urbach Energy
Author(s) -
Kronemeijer Auke J.,
Pecunia Vincenzo,
Venkateshvaran Deepak,
Nikolka Mark,
Sadhanala Aditya,
Moriarty John,
Szumilo Monika,
Sirringhaus Henning
Publication year - 2014
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201303060
Subject(s) - materials science , transistor , semiconductor , optoelectronics , field effect transistor , band gap , polymer , active layer , condensed matter physics , absorption (acoustics) , charge carrier , layer (electronics) , nanotechnology , thin film transistor , voltage , composite material , physics , quantum mechanics
A general semiconductor‐independent two‐dimensional character of the carrier distribution in top‐gate polymer field‐effect transistors is revealed by analysing temperature‐dependent transfer characteristics and the sub‐bandgap absorption tails of the polymer semiconductors. A correlation between the extracted width of the density of states and the Urbach energy is presented, corroborating the 2D accumulation layer and demonstrating an intricate connection between optical measurements concerning disorder and charge transport in transistors.