Phase Stability and Defect Physics of a Ternary ZnSnN 2  Semiconductor: First Principles Insights | Zendy

Chen Shiyou | Zendy; Narang Prineha | Zendy; Atwater Harry A. | Zendy; Wang LinWang | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

Phase Stability and Defect Physics of a Ternary ZnSnN 2 Semiconductor: First Principles Insights

Author(s) -

Chen Shiyou,

Narang Prineha,

Atwater Harry A.,

Wang LinWang

Publication year - 2014

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201302727

Subject(s) - materials science , ternary operation , impurity , semiconductor , band gap , phase (matter) , enthalpy , doping , conductivity , condensed matter physics , nanotechnology , chemical physics , thermodynamics , chemistry , optoelectronics , physics , quantum mechanics , computer science , programming language

First‐principles calculations show that ZnSnN 2 has a very small formation enthalpy, and the donor defects such as Sn Zn antisites and O N impurities have high concentration, making the material degenerately n‐type, which explains the observed high electron concentration. ZnSnN 2 can be regarded as a new material that combines a metal‐like conductivity with an optical bandgap around 2 eV.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research