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Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
Author(s) -
Mudd Garry W.,
Svatek Simon A.,
Ren Tianhang,
Patanè Amalia,
Makarovsky Oleg,
Eaves Laurence,
Beton Peter H.,
Kovalyuk Zakhar D.,
Lashkarev George V.,
Kudrynskyi Zakhar R.,
Dmitriev Alexandr I.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201302616
Subject(s) - materials science , band gap , quantum dot , optoelectronics , nanotechnology , exfoliation joint , graphene
Strong quantization effects and tuneable near‐infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ‐rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.