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25th Anniversary Article: Recent Advances in n‐Type and Ambipolar Organic Field‐Effect Transistors
Author(s) -
Zhao Yan,
Guo Yunlong,
Liu Yunqi
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201302315
Subject(s) - ambipolar diffusion , flexibility (engineering) , materials science , backplane , organic semiconductor , transistor , nanotechnology , field effect transistor , fabrication , semiconductor , optoelectronics , electron , electrical engineering , physics , engineering , medicine , statistics , mathematics , alternative medicine , quantum mechanics , voltage , pathology
The advantages of organic field‐effect transistors, such as low cost, mechanical flexibility and large‐area fabrication, make them potentially useful for electronic applications such as flexible switching backplanes for video displays, radio frequency identifications and so on. A large amount of molecules were designed and synthesized for electron transporting (n‐type) and ambipolar organic semiconductors with improved performance and stability. In this review, we focus on the advances in performance and molecular design of n‐type and ambipolar semiconductors reported in the past few years.