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Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs
Author(s) -
Hong Young Joon,
Yang Jae Won,
Lee Wi Hyoung,
Ruoff Rodney S.,
Kim Kwang S.,
Fukui Takashi
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201302312
Subject(s) - heterojunction , graphene , epitaxy , materials science , van der waals force , inversion (geology) , optoelectronics , nanostructure , nanotechnology , condensed matter physics , layer (electronics) , physics , quantum mechanics , molecule , paleontology , structural basin , biology
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As‐polar direction, indicating polarity inversion of the double heterostructures. First‐principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.