Voltage‐Impulse‐Induced Non‐Volatile Ferroelastic Switching of Ferromagnetic Resonance for Reconfigurable Magnetoelectric Microwave Devices | Zendy

Liu Ming | Zendy; Howe Brandon M. | Zendy; Grazulis Lawrence | Zendy; Mahalingam Krishnamurthy | Zendy; Nan Tianxiang | Zendy; Sun Nian X. | Zendy; Brown Gail J. | Zendy

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Voltage‐Impulse‐Induced Non‐Volatile Ferroelastic Switching of Ferromagnetic Resonance for Reconfigurable Magnetoelectric Microwave Devices

Author(s) -

Liu Ming,

Howe Brandon M.,

Grazulis Lawrence,

Mahalingam Krishnamurthy,

Nan Tianxiang,

Sun Nian X.,

Brown Gail J.

Publication year - 2013

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201301989

Subject(s) - materials science , ferromagnetic resonance , impulse (physics) , microwave , voltage , multiferroics , heterojunction , anisotropy , ferromagnetism , ferroelasticity , optoelectronics , computer science , electrical engineering , ferroelectricity , condensed matter physics , telecommunications , physics , magnetization , quantum mechanics , magnetic field , dielectric , engineering

A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices , which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage‐impulse‐induced two‐step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non‐volatile FMR tuning in FeCoB/PMN‐PT (011) multiferroic heterostructures.

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