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Voltage‐Impulse‐Induced Non‐Volatile Ferroelastic Switching of Ferromagnetic Resonance for Reconfigurable Magnetoelectric Microwave Devices
Author(s) -
Liu Ming,
Howe Brandon M.,
Grazulis Lawrence,
Mahalingam Krishnamurthy,
Nan Tianxiang,
Sun Nian X.,
Brown Gail J.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301989
Subject(s) - materials science , ferromagnetic resonance , impulse (physics) , microwave , voltage , multiferroics , heterojunction , anisotropy , ferromagnetism , ferroelasticity , optoelectronics , computer science , electrical engineering , ferroelectricity , condensed matter physics , telecommunications , physics , magnetization , quantum mechanics , magnetic field , dielectric , engineering
A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices , which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage‐impulse‐induced two‐step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non‐volatile FMR tuning in FeCoB/PMN‐PT (011) multiferroic heterostructures.