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Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory
Author(s) -
Wang Hong,
Meng Fanben,
Cai Yurong,
Zheng Liyan,
Li Yuangang,
Liu Yuanjun,
Jiang Yueyue,
Wang Xiaotian,
Chen Xiaodong
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301983
Subject(s) - sericin , materials science , non volatile memory , semiconductor memory , nanotechnology , optoelectronics , composite material , computer science , silk , computer hardware
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10 6 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.