Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory | Zendy

Wang Hong | Zendy; Meng Fanben | Zendy; Cai Yurong | Zendy; Zheng Liyan | Zendy; Li Yuangang | Zendy; Liu Yuanjun | Zendy; Jiang Yueyue | Zendy; Wang Xiaotian | Zendy; Chen Xiaodong | Zendy

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Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

Author(s) -

Wang Hong,

Meng Fanben,

Cai Yurong,

Zheng Liyan,

Li Yuangang,

Liu Yuanjun,

Jiang Yueyue,

Wang Xiaotian,

Chen Xiaodong

Publication year - 2013

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201301983

Subject(s) - sericin , materials science , non volatile memory , semiconductor memory , nanotechnology , optoelectronics , composite material , computer science , silk , computer hardware

Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10 6 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

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