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Logic Computation in Phase Change Materials by Threshold and Memory Switching
Author(s) -
Cassinerio M.,
Ciocchini N.,
Ielmini D.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301940
Subject(s) - nand gate , chalcogenide , memristor , phase change memory , non volatile memory , scalability , logic gate , computer science , nand logic , and gate , materials science , electronic engineering , nanotechnology , computer hardware , optoelectronics , engineering , algorithm , layer (electronics) , database
Memristors , namely hysteretic devices capable of changing their resistance in response to applied electrical stimuli, may provide new opportunities for future memory and computation, thanks to their scalable size, low switching energy and nonvolatile nature. We have developed a functionally complete set of logic functions including NOR, NAND and NOT gates, each utilizing a single phase‐change memristor (PCM) where resistance switching is due to the phase transformation of an active chalcogenide material. The logic operations are enabled by the high functionality of nanoscale phase change, featuring voltage comparison, additive crystallization and pulse‐induced amorphization. The nonvolatile nature of memristive states provides the basis for developing reconfigurable hybrid logic/memory circuits featuring low‐power and high‐speed switching.