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Ultrathin Hetero‐Nanowire‐Based Flexible Electronics with Tunable Conductivity
Author(s) -
Liu JianWei,
Huang WeiRan,
Gong Ming,
Zhang Meng,
Wang JinLong,
Zheng Jing,
Yu ShuHong
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301903
Subject(s) - materials science , nanowire , bend radius , electronics , flexible electronics , conductivity , optoelectronics , bending , diode , electrical conductor , nanotechnology , radius , flexible display , sheet resistance , composite material , layer (electronics) , thin film transistor , electrical engineering , chemistry , computer security , computer science , engineering
Flexible hetero‐nanowire electronics: A simple solution process has been developed for the first time to fabricate macroscopic flexible, ordered Au–Te hetero‐nanowire film electronics with tunable resistance from MΩ to Ω at room temperature (see the Figure). Nanowire films with an electrical conductivity as low as 10 000 S cm −1 and a sheet resistance of 15 Ω sq –1 can generate reliable interconnections for light‐emitting diode (LED) arrays. The Au–Te hetero‐nanowire films remain conductive after bending 6000 times with a maximum bending radius of 2.0 mm without any obvious degradation.
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