Premium
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost‐Competitive Light Emitters
Author(s) -
Jung Sungmin,
Song KiRyong,
Lee SungNam,
Kim Hyunsoo
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301640
Subject(s) - materials science , light emitting diode , etching (microfabrication) , ohmic contact , optoelectronics , diode , isotropic etching , prism , dry etching , optics , nanotechnology , physics , layer (electronics)
Spotlight on etching: (11‐22) semipolar GaN plane light‐emitting diodes (LEDs) are demonstrated using a wet‐etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10‐10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.