Tungsten Oxide Buffer Layers Fabricated in an Inert Sol‐Gel Process at Room‐Temperature for Blue Organic Light‐Emitting Diodes | Zendy

Höfle Stefan | Zendy; Bruns Michael | Zendy; Strässle Stefan | Zendy; Feldmann Claus | Zendy; Lemmer Uli | Zendy; Colsmann Alexander | Zendy

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Tungsten Oxide Buffer Layers Fabricated in an Inert Sol‐Gel Process at Room‐Temperature for Blue Organic Light‐Emitting Diodes

Author(s) -

Höfle Stefan,

Bruns Michael,

Strässle Stefan,

Feldmann Claus,

Lemmer Uli,

Colsmann Alexander

Publication year - 2013

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201301627

Subject(s) - materials science , oled , inert , tungsten , fabrication , diode , inert gas , stoichiometry , optoelectronics , phosphorescence , oxide , tungsten oxide , electroluminescence , deposition (geology) , chemical engineering , nanotechnology , layer (electronics) , composite material , optics , organic chemistry , metallurgy , alternative medicine , chemistry , pathology , engineering , fluorescence , medicine , physics , sediment , biology , paleontology

WO 3 deposition from tungsten ethoxide precursor solutions at room temperature is demonstrated. The W(OEt) 6 precursor can be converted under inert conditions and hence avoids sample contamination with oxygen, opening a pathway to more stable devices. The stoichiometry of all WO 3 layers and the optoelectronic performance of the respective SMOLEDs well match thermally evaporated WO 3 and its corresponding SMOLEDs. The solution processed WO 3 hole injection layers enable the fabrication of blue phosphorescent OLEDs with low onset voltage and current efficiencies of up to 14 cd A −1 .

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