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Tunable Electronic Transport Properties of Metal‐Cluster‐Decorated III–V Nanowire Transistors
Author(s) -
Han Ning,
Wang Fengyun,
Hou Jared J.,
Yip Sen Po,
Lin Hao,
Xiu Fei,
Fang Ming,
Yang Zaixing,
Shi Xiaoling,
Dong Guofa,
Hung Tak Fu,
Ho Johnny C.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301362
Subject(s) - materials science , nanowire , cluster (spacecraft) , transistor , fabrication , work function , nanotechnology , optoelectronics , modulation (music) , metal , field effect transistor , electron mobility , voltage , electrical engineering , layer (electronics) , medicine , alternative medicine , engineering , pathology , computer science , philosophy , metallurgy , programming language , aesthetics
A metal‐cluster‐decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III–V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high‐mobility enhancement‐mode InAs NW parallel FETs as well as the construction of low‐power InAs NW inverters.