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Towards the Development of Flexible Non‐Volatile Memories
Author(s) -
Han SuTing,
Zhou Ye,
Roy V. A. L.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301361
Subject(s) - ferroelectric ram , non volatile memory , materials science , resistive random access memory , non volatile random access memory , random access memory , flexibility (engineering) , electronics , nanotechnology , transistor , random access , perspective (graphical) , flash memory , ferroelectricity , computer data storage , semiconductor memory , computer science , electrical engineering , optoelectronics , embedded system , computer memory , computer hardware , memory refresh , engineering , artificial intelligence , statistics , mathematics , voltage , dielectric , operating system
Flexible non‐volatile memories have attracted tremendous attentions for data storage for future electronics application. From device perspective, the advantages of flexible memory devices include thin, lightweight, printable, foldable and stretchable. The flash memories, resistive random access memories (RRAM) and ferroelectric random access memory/ferroelectric field‐effect transistor memories (FeRAM/FeFET) are considered as promising candidates for next generation non‐volatile memory device. Here, we review the general background knowledge on device structure, working principle, materials, challenges and recent progress with the emphasis on the flexibility of above three categories of non‐volatile memories.