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Room‐Temperature Tunneling Behavior of Boron Nitride Nanotubes Functionalized with Gold Quantum Dots
Author(s) -
Lee Chee Huei,
Qin Shengyong,
Savaikar Madhusudan A.,
Wang Jiesheng,
Hao Boyi,
Zhang Dongyan,
Banyai Douglas,
Jaszczak John A.,
Clark Kendal W.,
Idrobo JuanCarlos,
Li AnPing,
Yap Yoke Khin
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301339
Subject(s) - materials science , boron nitride , quantum tunnelling , quantum dot , nanotechnology , optoelectronics , transistor , field effect transistor , voltage , electrical engineering , engineering
One‐dimensional arrays of gold quantum dots (QDs) on insulating boron nitride nanotubes (BNNTs) can form conduction channels of tunneling field‐effect transistors. We demonstrate that tunneling currents can be modulated at room temperature by tuning the lengths of QD‐BNNTs and the gate potentials. Our discovery will inspire the creative use of nanostructured metals and insulators for future electronic devices.