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Low‐Voltage Self‐Assembled Monolayer Field‐Effect Transistors on Flexible Substrates
Author(s) -
Schmaltz Thomas,
Amin Atefeh Y.,
Khassanov Artoem,
MeyerFriedrichsen Timo,
Steinrück HansGeorg,
Magerl Andreas,
Segura Juan José,
Voitchovsky Kislon,
Stellacci Francesco,
Halik Marcus
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301176
Subject(s) - monolayer , materials science , self assembled monolayer , substrate (aquarium) , field effect transistor , transistor , optoelectronics , nanotechnology , bending , voltage , self assembly , composite material , electrical engineering , oceanography , engineering , geology
Self‐assembled monolayer field‐effect transistors (SAMFETs) of BTBT functionalized phosphonic acids are fabricated. The molecular design enables device operation with charge carrier mobilities up to 10 −2 cm 2 V −1 s −1 and for the first time SAMFETs which operate on rough, flexible PEN substrates even under mechanical substrate bending.
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