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Non‐Volatile Control of 2DEG Conductivity at Oxide Interfaces
Author(s) -
Kim ShinIk,
Kim DaiHong,
Kim Yoonjung,
Moon Seon Young,
Kang MinGyu,
Choi Jong Kwon,
Jang Ho Won,
Kim Seong Keun,
Choi JiWon,
Yoon SeokJin,
Chang Hye Jung,
Kang ChongYun,
Lee Suyoun,
Hong SeongHyeon,
Kim JinSang,
Baek SeungHyub
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301097
Subject(s) - overlayer , ferroelectricity , materials science , oxide , epitaxy , conductivity , nanotechnology , polarization (electrochemistry) , optoelectronics , computer science , condensed matter physics , physics , chemistry , layer (electronics) , dielectric , metallurgy
The functionalization of two‐dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr 0.2 Ti 0.8 )O 3 overlayer on 2DEG (LaAlO 3 /SrTiO 3 ), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non‐volatile way by ferroelectric polarization switching.