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Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping
Author(s) -
Chambers Scott A.,
Gu Meng,
Sushko Peter V.,
Yang Hao,
Wang Chongmin,
Browning Nigel D.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201301030
Subject(s) - materials science , doping , heterojunction , epitaxy , contact resistance , substrate (aquarium) , oxide , metal , diffusion , optoelectronics , nanotechnology , metallurgy , layer (electronics) , oceanography , physics , geology , thermodynamics
Heteroepitaxial growth of Cr metal on Nb‐doped SrTiO 3 (001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near‐surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low.