Upgraded Silicon Nanowires by Metal‐Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar‐Grade Silicon | Zendy

Li Xiaopeng | Zendy; Xiao Yanjun | Zendy; Bang Jin Ho | Zendy; Lausch Dominik | Zendy; Meyer Sylke | Zendy; Miclea PaulTiberiu | Zendy; Jung JinYoung | Zendy; Schweizer Stefan L. | Zendy; Lee JungHo | Zendy; Wehrspohn Ralf B. | Zendy

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Upgraded Silicon Nanowires by Metal‐Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar‐Grade Silicon

Author(s) -

Li Xiaopeng,

Xiao Yanjun,

Bang Jin Ho,

Lausch Dominik,

Meyer Sylke,

Miclea PaulTiberiu,

Jung JinYoung,

Schweizer Stefan L.,

Lee JungHo,

Wehrspohn Ralf B.

Publication year - 2013

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201300973

Subject(s) - materials science , silicon , etching (microfabrication) , nanowire , photocurrent , silicon nanowires , nanotechnology , metal , isotropic etching , metallurgy , optoelectronics , layer (electronics)

Through metal‐assisted chemical etching (MaCE), superior purification of dirty Si is observed , from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.

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