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Upgraded Silicon Nanowires by Metal‐Assisted Etching of Metallurgical Silicon: A New Route to Nanostructured Solar‐Grade Silicon
Author(s) -
Li Xiaopeng,
Xiao Yanjun,
Bang Jin Ho,
Lausch Dominik,
Meyer Sylke,
Miclea PaulTiberiu,
Jung JinYoung,
Schweizer Stefan L.,
Lee JungHo,
Wehrspohn Ralf B.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300973
Subject(s) - materials science , silicon , etching (microfabrication) , nanowire , photocurrent , silicon nanowires , nanotechnology , metal , isotropic etching , metallurgy , optoelectronics , layer (electronics)
Through metal‐assisted chemical etching (MaCE), superior purification of dirty Si is observed , from 99.74 to 99.9884% for metallurgical Si and from 99.999772 to 99.999899% for upgraded metallurgical Si. In addition, large area of silicon nanowires (SiNW) are fabricated. The purification effect induces a ∼35% increase in photocurrent for SiNW based photoelectrochemical cell.