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Flexible Low‐Voltage Organic Transistors with High Thermal Stability at 250 °C
Author(s) -
Yokota Tomoyuki,
Kuribara Kazunori,
Tokuhara Takeyoshi,
Zschieschang Ute,
Klauk Hagen,
Takimiya Kazuo,
Sadamitsu Yuji,
Hamada Masahiro,
Sekitani Tsuyoshi,
Someya Takao
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300941
Subject(s) - materials science , transistor , thin film transistor , thermal stability , optoelectronics , inverter , threshold voltage , electronic circuit , cmos , organic semiconductor , thermal , voltage , nanotechnology , chemical engineering , electrical engineering , layer (electronics) , physics , engineering , meteorology
Low‐operating‐voltage flexible organic thin‐film transistors with high thermal stability using DPh‐DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250 °C for 30 min. Furthermore, flexible organic pseudo‐CMOS inverter circuits, which are functional after heating to 200 °C, are demonstrated.