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Highly Conductive SrVO 3 as a Bottom Electrode for Functional Perovskite Oxides
Author(s) -
Moyer Jarrett A.,
Eaton Craig,
EngelHerbert Roman
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300900
Subject(s) - materials science , electrode , molecular beam epitaxy , perovskite (structure) , electrical conductor , compatibility (geochemistry) , electrical resistivity and conductivity , stoichiometry , oxide , thin film , optoelectronics , nanotechnology , epitaxy , chemical engineering , composite material , chemistry , metallurgy , layer (electronics) , electrical engineering , engineering
Stoichiometric SrVO 3 thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO 3 , as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO 3 a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.