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Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography
Author(s) -
Son Jeong Gon,
Son Myungwoo,
Moon KyeongJoo,
Lee Byoung Hun,
Myoung JaeMin,
Strano Michael S.,
Ham MoonHo,
Ross Caroline A.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300813
Subject(s) - materials science , graphene , copolymer , lithography , annealing (glass) , nanotechnology , template , transistor , photocurrent , optoelectronics , nanomesh , field effect transistor , nanosphere lithography , polymer , composite material , fabrication , medicine , physics , alternative medicine , quantum mechanics , pathology , voltage
Sub‐10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD‐grown graphene. A mask is used made by the directed self‐assembly of a cylindrical PS‐ b ‐PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface‐modified removable polymeric templates, and high Flory‐Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.