Premium
Sub‐10 nm Graphene Nanoribbon Array Field‐Effect Transistors Fabricated by Block Copolymer Lithography
Author(s) -
Son Jeong Gon,
Son Myungwoo,
Moon KyeongJoo,
Lee Byoung Hun,
Myoung JaeMin,
Strano Michael S.,
Ham MoonHo,
Ross Caroline A.
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300813
Subject(s) - materials science , graphene , copolymer , lithography , annealing (glass) , nanotechnology , template , transistor , photocurrent , optoelectronics , nanomesh , field effect transistor , nanosphere lithography , polymer , composite material , fabrication , medicine , physics , alternative medicine , quantum mechanics , pathology , voltage
Sub‐10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD‐grown graphene. A mask is used made by the directed self‐assembly of a cylindrical PS‐ b ‐PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface‐modified removable polymeric templates, and high Flory‐Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom