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Ferroelectric Control of the Conduction at the LaAlO 3 /SrTiO 3 Heterointerface
Author(s) -
Tra Vu Thanh,
Chen JhihWei,
Huang PoCheng,
Huang BoChao,
Cao Ye,
Yeh ChaoHui,
Liu HengJui,
Eliseev Eugene A.,
Morozovska An.,
Lin JiunnYuan,
Chen YiChun,
Chu MingWen,
Chiu PoWen,
Chiu YaPing,
Chen LongQing,
Wu ChungLin,
Chu YingHao
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300757
Subject(s) - ferroelectricity , materials science , oxide , band bending , doping , polarization (electrochemistry) , polar , heterojunction , thermal conduction , conduction band , condensed matter physics , nanotechnology , optoelectronics , electron , physics , chemistry , quantum mechanics , astronomy , dielectric , metallurgy , composite material
Modulation of band bending at a complex oxide heterointerface by a ferroelectric layer is demonstrated. The as‐grown polarization ( P up ) leads to charge depletion and consequently low conduction. Switching the polarization direction ( P down ) results in charge accumulation and enhances the conduction at the interface. The metal–insulator transition at a conducting polar/nonpolar oxide heterointerface can be controlled by ferroelectric doping.