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Unexpected Dominance of Vertical Dislocations in High‐Misfit Ge/Si(001) Films and Their Elimination by Deep Substrate Patterning
Author(s) -
Marzegalli Anna,
Isa Fabio,
Groiss Heiko,
Müller Elisabeth,
Falub Claudiu V.,
Taboada Alfonso G.,
Niedermann Philippe,
Isella Giovanni,
Schäffler Friedrich,
Montalenti Francesco,
von Känel Hans,
Miglio Leo
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300550
Subject(s) - materials science , substrate (aquarium) , optoelectronics , nanotechnology , crystallography , chemistry , oceanography , geology
An innovative strategy in dislocation analysis, based on comparison between continuous and tessellated film , demonstrates that vertical dislocations, extending straight up to the surface, easily dominate in thick Ge layers on Si(001) substrates. The complete elimination of dislocations is achieved by growing self‐aligned and self‐limited Ge microcrystals with fully faceted growth fronts, as demonstrated by AFM extensive etch‐pit counts.