Premium
Facile Encapsulation of Oxide based Thin Film Transistors by Atomic Layer Deposition based on Ozone
Author(s) -
Fakhri Morteza,
Babin Nikolai,
Behrendt Andreas,
Jakob Timo,
Görrn Patrick,
Riedl Thomas
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300549
Subject(s) - materials science , oxide , encapsulation (networking) , thin film transistor , atomic layer deposition , nanotechnology , zinc , indium tin oxide , metal , optoelectronics , thin film , computer science , layer (electronics) , metallurgy , computer network
A simplified encapsulation strategy for metal‐oxide based TFTs , using ozone instead of water as an oxygen source in a low‐temperature ALD process is demonstrated. Thereby, the threshold voltage remains unaltered and the hysteresis is permanently reduced. Costly energy‐ and time‐consuming post‐treatment processes can be avoided. This concept is widely applicable to various encapsulation materials (e.g., Al 2 O 3 , TiO 2 , ZrO 2 ) and metal‐oxide channel semiconductors (e.g., zinc–tin–oxide (ZTO), indium–gallium–zinc–oxide (IGZO)).