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Light‐Emitting Field‐Effect Transistors Having Combined Organic Semiconductor and Metal Oxide Layers
Author(s) -
Yamada Keisei,
Yamao Takeshi,
Hotta Shu
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300456
Subject(s) - materials science , oxide , optoelectronics , layer (electronics) , transistor , electrode , field effect transistor , metal , insulator (electricity) , organic semiconductor , metal insulator metal , nanotechnology , electrical engineering , voltage , metallurgy , capacitor , chemistry , engineering
A new organic light‐emitting field‐effect transistor characterized by a metal oxide layer inserted between the organic layer and the gate insulator is proposed. The metal oxide is indirectly connected with source and drain electrodes through the organic layer. Upon increasing the potential difference between the source and drain electrodes, the emission becomes exceedingly strong and the emission region encompasses the whole channel zone.