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Printed, sub‐2V ZnO Electrolyte Gated Transistors and Inverters on Plastic
Author(s) -
Hong Kihyon,
Kim Se Hyun,
Lee Keun Hyung,
Frisbie C. Daniel
Publication year - 2013
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201300211
Subject(s) - kapton , transistor , materials science , electrolyte , thin film transistor , substrate (aquarium) , optoelectronics , capacitance , nanotechnology , electrical engineering , voltage , polyimide , physics , electrode , engineering , layer (electronics) , oceanography , quantum mechanics , geology
Printed, flexible sub‐2 V ZnO electrolyte gated transistors (EGTs) are demonstrated . ZnO EGTs with high‐capacitance ion‐gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm −2 V −1 s −1 ), low operation voltage (<2 V), and good electrical/mechanical stabilities.
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