Premium
Nanoengineering: Atomic Layer Engineering of Perovskite Oxides for Chemically Sharp Heterointerfaces (Adv. Mater. 48/2012)
Author(s) -
Choi Woo Seok,
Rouleau Christopher M.,
Seo Sung Seok A.,
Luo Zhenlin,
Zhou Hua,
Fister Timothy T.,
Eastman Jeffrey A.,
Fuoss Paul H.,
Fong Dillon D.,
Tischler Jonathan Z.,
Eres Gyula,
Chisholm Matthew F.,
Lee Ho Nyung
Publication year - 2012
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201290305
Subject(s) - materials science , pulsed laser deposition , atomic layer epitaxy , epitaxy , heterojunction , nanoengineering , oxide , thin film , perovskite (structure) , layer (electronics) , optoelectronics , atomic layer deposition , laser , nanotechnology , chemical engineering , optics , metallurgy , engineering , physics
Pulsed laser deposition (PLD) is a widely used growth technique for epitaxy of a wide range of oxide thin films and heterostructures. While the highly energetic PLD process is beneficial for epitaxy, it can deteriorate the interface's structure and chemical abruptness when grown under high vacuum. On page 6423 , Ho Nyung Lee and co‐workers provide a route to a chemically sharp oxide hetero‐interface by atomic layer growth control during pulsed laser epitaxy.